| PART |
Description |
Maker |
| AGR19125E AGR19125EF AGR19125EU |
125 W, 1930 MHz-1990 MHz, PCS LDMOS RF Power Transistor
|
TriQuint Semiconductor
|
| MAFR-000086-PS1C1T |
Single Junction Drop-In Circulator 1930 MHz-1990 MHz
|
M/A-COM Technology Solutions, Inc.
|
| AGR19030EF |
30 W, 1930 MHz-1990 MHz, PCS LDMOS RF Power Transistor
|
TriQuint Semiconductor
|
| 1920CD60 |
60 W, 25 V, 1930-1990 MHz common emitter transistor
|
GHz Technology
|
| 1920AB25 |
25 W, 25 V, 1930-1990 MHz common emitter transistor
|
GHz Technology
|
| MHPA19010 |
MHPA19010 1930-1990 MHz, 10 W, 24.5 dB RF High Power LDMOS Amplifier
|
Motorola
|
| 1920AB60 |
60 W, 25 V, 1930-1990 MHz common emitter transistor
BJT 双极型晶体管
|
GHz Technology
Micrel Semiconductor, Inc.
|
| PTF191601 PTF191601E |
LDMOS RF Power Field Effect Transistor 160 W/ 1930-1990 MHz
LDMOS RF Power Field Effect Transistor 160 W, 1930-1990 MHz
|
INFINEON[Infineon Technologies AG]
|
| PTFA192001F PTFA192001E |
Thermally-Enhanced High Power RF LDMOS FETs 200 W, 1930-1990 MHz
|
Infineon Technologies AG
|
| PFM19030 PFM19030SM PFM19030F |
1930-1990 MHz, 30W, 2-Stage Power Module Enhancement-Mode Lateral MOSFETs
|
List of Unclassifed Manufacturers
ETC[ETC]
|
| MRF7S19100N |
1930?1990 MHz, 29 W Avg., 28 V Single W?CDMA Lateral N?Channel RF Power MOSFETs
From old datasheet system
|
Motorola Semiconductor Products
|
| MRF5S19150H MRF5S19130HR306 MRF5S19130HSR3 MRF5S19 |
RF Power Field Effect Transistors
MRF5S19130HSR3 1930-1990 MHz, 26 W Avg., 28 V, 2 x N-CDMA Lateral N-Channel RF Power MOSFETs
|
FREESCALE[Freescale Semiconductor, Inc]
MOTOROLA
|
